JPS6238881B2 - - Google Patents
Info
- Publication number
- JPS6238881B2 JPS6238881B2 JP54057264A JP5726479A JPS6238881B2 JP S6238881 B2 JPS6238881 B2 JP S6238881B2 JP 54057264 A JP54057264 A JP 54057264A JP 5726479 A JP5726479 A JP 5726479A JP S6238881 B2 JPS6238881 B2 JP S6238881B2
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- power amplifier
- electrode
- integrated power
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Waveguides (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5726479A JPS55149503A (en) | 1979-05-10 | 1979-05-10 | Adjusting method for monolithic integrated electric power amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5726479A JPS55149503A (en) | 1979-05-10 | 1979-05-10 | Adjusting method for monolithic integrated electric power amplifier |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55149503A JPS55149503A (en) | 1980-11-20 |
JPS6238881B2 true JPS6238881B2 (en]) | 1987-08-20 |
Family
ID=13050658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5726479A Granted JPS55149503A (en) | 1979-05-10 | 1979-05-10 | Adjusting method for monolithic integrated electric power amplifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55149503A (en]) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57150960U (en]) * | 1981-03-17 | 1982-09-22 | ||
JPS5821902A (ja) * | 1981-07-30 | 1983-02-09 | Murata Mfg Co Ltd | ストリツプラインの製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS529319Y2 (en]) * | 1972-06-22 | 1977-02-26 | ||
JPS50151445A (en]) * | 1974-05-24 | 1975-12-05 |
-
1979
- 1979-05-10 JP JP5726479A patent/JPS55149503A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55149503A (en) | 1980-11-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3986196A (en) | Through-substrate source contact for microwave FET | |
US4016643A (en) | Overlay metallization field effect transistor | |
JPH09148587A (ja) | 半導体装置 | |
JPS59123270A (ja) | モノリシツク回路 | |
JPH03194931A (ja) | 半導体装置の製造方法 | |
JPS6238881B2 (en]) | ||
US4646028A (en) | GaAs monolithic medium power amplifier | |
JPH01158801A (ja) | マイクロストリップライン | |
JPS5892277A (ja) | 電界効果トランジスタの製造方法 | |
JPS5915083Y2 (ja) | GaAsシヨツトキ−バリアゲ−ト電界効果トランジスタ電力増幅装置 | |
JP2000277530A (ja) | 半導体装置及びその製造方法 | |
JPS5838939B2 (ja) | 集積回路 | |
JPS5892270A (ja) | GaAsマイクロ波モノリシツク集積回路装置 | |
JP2000101067A (ja) | 半導体装置および集積回路装置 | |
JPS62211962A (ja) | 高周波半導体装置の製造方法 | |
JP2878049B2 (ja) | 高周波用トランジスタ | |
JP3168969B2 (ja) | 電界効果トランジスタおよび集積回路、電界効果トランジスタあるいは集積回路の製造方法 | |
JP3488833B2 (ja) | 電界効果トランジスタの形成方法 | |
JP3281204B2 (ja) | 配線構造及びそのバイヤホール形成方法 | |
JPH0249733Y2 (en]) | ||
JPS62128561A (ja) | 半導体装置 | |
JPH079980B2 (ja) | 半導体装置の製造方法 | |
JPS60134483A (ja) | 半導体装置 | |
JPH06318805A (ja) | 高周波半導体装置 | |
JP3093230B2 (ja) | 半導体集積回路 |